NTMS4706N
TYPICAL PERFORMANCE CURVES
30
25
5V
3.2 V
10 V
3V
T J = 25 ° C
35
30
V DS ≥ 10 V
20
2.8 V
25
20
15
10
5
0
2.6 V
2.4 V
2.2 V
15
10
5
0
T J = 125 ° C
T J = 25 ° C
T J = ?55 ° C
0
1
2
3
4
5
6
7
8
9
10
1
1.5
2
2.5
3
3.5
4
4.5
0.03
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
T J = 25 ° C
0.018
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
T J = 25 ° C
0.025
I D = 10 A
0.015
0.02
V GS = 4.5 V
0.012
0.015
V GS = 10 V
0.01
0.005
0.009
0.006
1
2
3
4
5
6
7
8
9
10
2
4
6
8
10
12
14
16
18
20
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 3. On?Resistance vs. Gate?to?Source
Voltage
1.8
10000
I D, DRAIN CURRENT (AMPS)
Figure 4. On?Resistance vs. Drain Current and
Gate Voltage
1.6
1.4
1.2
I D = 10.3 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1
0.8
0.6
100
10
T J = 100 ° C
?50
?25
0
25
50
75
100
125
150
3
6
9
12
15
18
21
24
27
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?to?Source Leakage Current
vs. Voltage
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相关代理商/技术参数
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NTMS4801N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 12 A, N−Channel, SO−8
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